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Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

Momeni Pakdehi, D.; Aprojanz, J.; Sinterhauf, A.; Pierz, K.; Kruskopf, M.; Willke, P. ORCID iD icon; Baringhaus, J.; Stöckmann, J. P.; Traeger, G. A.; Hohls, F.; Tegenkamp, C.; Wenderoth, M.; Ahlers, F. J.; Schumacher, H. W.


We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%. We combine microscopic electronic properties with nanoscale transport experiments and thereby disentangle the underlying microscopic scattering mechanism to explain the remaining resistance anisotropy. Eventually, this can be entirely attributed to the resistance and the number of substrate steps which induce local scattering. Thereby, our data represent the ultimate limit for resistance isotropy of epitaxial graphene on SiC for the given miscut of the substrate.

DOI: 10.1021/acsami.7b18641
Zitationen: 46
Web of Science
Zitationen: 41
Zitationen: 47
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 02.2018
Sprache Englisch
Identifikator ISSN: 1944-8244, 1944-8252
KITopen-ID: 1000119967
Erschienen in ACS applied materials & interfaces
Verlag American Chemical Society (ACS)
Band 10
Heft 6
Seiten 6039–6045
Vorab online veröffentlicht am 05.02.2018
Schlagwörter SiC epitaxial graphene, isotropic conductance, resistance anisotropy, uniform growth, SiC, terrace step,s bilayer-free graphene, scanning tunneling potentiometry
Nachgewiesen in Scopus
Web of Science
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