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Investigation of nitrogen enriched silicon for particle detectors

Hönig, J.C.; Baselga, M.; Vignali, M. Centis; Diehl, L.; Dierlamm, A.; Fretwurst, E.; Kaminski, P.; Moll, M.; Moos, F.; Mori, R.; Parzefall, U.; Pellegrini, G.; Rafí, J.M.; Schwandt, J.; Wiik-Fuchs, L.

Abstract:
This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. The article features comparative studies using secondary ion mass spectrometry, electrical characterization, edge transient current technique, source and thermally stimulated current spectroscopy measurements on sensors that were irradiated up to a fluence of 1015 neq/cm2. Irradiations were performed with 23 MeV protons at the facilities in Karlsruhe (KIT), with 24 GeV/c protons at CERN (PS-IRRAD) and neutrons at the research reactor in Ljubljana. Secondary ion mass spectrometry measurements give evidence for nitrogen loss after processing, which makes gaining from nitrogen enrichment difficult.

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Verlagsausgabe §
DOI: 10.5445/IR/1000120406
Veröffentlicht am 23.06.2020
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Experimentelle Teilchenphysik (ETP)
Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2020
Sprache Englisch
Identifikator ISSN: 1748-0221
KITopen-ID: 1000120406
HGF-Programm 54.02.03 (POF III, LK 01) ASICs und Integrationstechnologien
Erschienen in Journal of Instrumentation
Verlag IOP Publishing
Band 15
Heft 05
Seiten Article: P05006
Vorab online veröffentlicht am 15.05.2020
Nachgewiesen in Dimensions
Web of Science
Scopus
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