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Characterization of solution-grown and sputtered in $_{x}$ (O,S) $_{y}$ buffer layers in Cu(In,Ga)Se$_{2}$ solar cells by analytical TEM

Jin, Xiaowei 1; Schneider, Reinhard 1; Popescu, Radian 1; Hariskos, Dimitrios; Witte, Wolfram; Powalla, Michael; Gerthsen, Dagmar 1
1 Laboratorium für Elektronenmikroskopie (LEM), Karlsruher Institut für Technologie (KIT)


Cu(In,Ga)Se$_{2}$ thin-film solar cells were fabricated with In $_{x}$ (O,S) $_{y}$ as buffer material, where the buffer was deposited by either solution growth or radio-frequency sputtering. To elucidate the influence of the particular deposition technique on the properties of the In $_{x}$ (O,S) $_{y}$ layers, their structural peculiarities were characterized by high-resolution transmission electron microscopy (TEM) and nanobeam electron diffraction. Energy-dispersive x-ray spectroscopy in combination with scanning TEM was used for chemical analysis of the interfacial regions between Cu(In,Ga)Se$_{2}$ absorber and In $_{x}$ (O,S) $_{y}$ layer as well as of the buffer itself. In general, the solution-grown and sputtered In $_{x}$ (O,S) $_{y}$ layers show a nanocrystalline structure. In both types of In $_{x}$ (O,S) $_{y}$ buffer layers, crystalline phases of tetragonal In$_{2}$S$_{3}$ and cubic In$_{2}$O$_{3}$ were detected. In addition, there are hints for the formation of a Cu-containing phase, e.g. hexagonal CuS in the sputtered In $_{x}$ (O,S) $_{y}$ layer. Moreover, there are also distinct differences in the chemical composition of the two analyzed In $_{x}$ (O,S) $_{y}$ layers, namely in the solution-grown In $_{x}$ (O,S) $_{y}$ buffer layer the oxygen content is considerably higher than in the sputtered In $_{x}$ (O,S) $_{y}$ layer.

Verlagsausgabe §
DOI: 10.5445/IR/1000120713
Veröffentlicht am 30.06.2020
DOI: 10.1088/1361-6641/ab6159
Zitationen: 4
Web of Science
Zitationen: 2
Zitationen: 4
Cover der Publikation
Zugehörige Institution(en) am KIT Laboratorium für Elektronenmikroskopie (LEM)
Universität Karlsruhe (TH) – Zentrale Einrichtungen (Zentrale Einrichtungen)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 03.2020
Sprache Englisch
Identifikator ISSN: 0268-1242, 1361-6641
KITopen-ID: 1000120713
Erschienen in Semiconductor science and technology
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 35
Heft 3
Seiten Art. Nr.: 034001
Vorab online veröffentlicht am 29.01.2020
Schlagwörter thin-film solar cell, Cu(In,Ga)Se2, Inx(O,S)y buffer, transmission electron microscopy, energy-dispersive x-ray spectroscopy
Nachgewiesen in Web of Science
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