HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si

Using High Resolution X-ray Diffraction (HRXRD) diagnostic techniques the influence of the transition layer of nanoporous silicon on the practical implementation and certain features of the epitaxial growth of GaN layers with the use of molecular beam epitaxy were investigated by means of plasma activation of nitrogen (MBE PA) on the templates of SiC/por-Si/c-Si. For the first time it was shown that introducing of the transition layer of nanoporous silicon in the template of SiC/por-Si/c-Si where the layer of 3C-SiC was obtained by substitution of the atoms had a number of indisputable advantages as compared with conventional silicon substrates. Particularly, such an approach, in fact, enabled a 90% reduction in the level of stresses in the crystalline lattice of the epitaxial GaN layer which was synthesized on SiC surface of SiC/por-Si/c-Si template by means of MBE PA technique as well as to decrease some of vertical dislocations within GaN layer.