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Real-time monitoring during growth: stress and structure formation at the metal/silicon interface

Krause, B.; Abadias, G.

The control of stress build-up during manufacturing is crucial for the performance and reliability of microelectronic devices. A widely used building block of these devices are silicide layers. The as-grown silicide interlayer represents a lower limit for the ongoing trend of device miniaturization. However, understanding its temporal formation during thin film deposition remains challenging. Here, we demonstrate that the combination of synchrotronbased and complementary real-time diagnostics during growth of Pd on Si provides valuable insight into the kinetics of phase transformation and the interplay between interfacial reaction, texture formation and stress build-up at the nanoscale.

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Zugehörige Institution(en) am KIT Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2020
Sprache Englisch
Identifikator KITopen-ID: 1000123624
HGF-Programm 56.03.20 (POF III, LK 01)
Nanoscience a.Material f.Inform.Technol.
Erschienen in SOLEIL highlights
Band 2019
Seiten 74-75
Bemerkung zur Veröffentlichung nichtreferierte Publikation der Forschungseinrichtung SOLEIL (F)
Vorab online veröffentlicht am 14.09.2020
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