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Nanolithographic Top‐Down Patterning of Polyoxovanadate‐based Nanostructures with Switchable Electrical Resistivity

Rösner, Benedikt; Fallica, Roberto; Johnson, Manuel; Späth, Andreas; Fink, Rainer; Ekinci, Yasin; David, Christian; Anjass, Montaha H.; Streb, Carsten

The top-down fabrication of ∼10 nm vanadium oxide nanostructures by electron beam lithography based on a molecular vanadium oxide resist material is reported. The new material enables the large-scale deposition of electrically switchable nanostructures which can be directly incorporated in established e-beam lithography. The findings could in future enable the top-down fabrication of functional metal oxide nanostructures in the < 10 nm domain.

The top-down lithographic fabrication of functional metal oxide nanostructures enables technologically important applications such as catalysis and electronics. Here, we report the use of molecular vanadium oxides, polyoxovanadates, as molecular precursors for electron beam lithography to obtain functional vanadium oxide nanostructures. The new resist class described gives access to nanostructures with minimum dimensions close to 10 nm. The lithographically prepared structures exhibit temperature-dependent switching behaviour of their electrical resistivity. The work could lay the foundation for accessing functional vanadium oxide nanostructures in the sub-10-nm domain using industrially established nanolithographic methods.

Verlagsausgabe §
DOI: 10.5445/IR/1000125263
Veröffentlicht am 28.11.2021
Cover der Publikation
Zugehörige Institution(en) am KIT Helmholtz-Institut Ulm (HIU)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 21.08.2020
Sprache Englisch
Identifikator ISSN: 2199-692X, 2199-692X
KITopen-ID: 1000125263
HGF-Programm 37.01.01 (POF III, LK 01) Fundamentals and Materials
Erschienen in ChemNanoMat
Verlag John Wiley and Sons
Seiten cnma.202000425
Vorab online veröffentlicht am 07.08.2020
Nachgewiesen in Dimensions
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