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Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Augustin, H.; Berger, N.; Dittmeier, S.; Hammerich, J.; Herkert, A.; Huth, L.; Immig, D.; Kröger, J.; Meier, F.; Perić, I.; Perrevoort, A.-K.; Schöning, A.; vom Bruch, D.; Wiedner, D.

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0 × 1015 neq/cm2) and 24 GeV protons (up to 7.8 × 1015 protons/cm2) and compare the performance with non-irradiated sensors. At sensor temperatures of about 8 °C efficiencies of ≥90% at noise rates below 40 Hz per pixel are measured for fluences of up to 1.5 × 1015 neq/cm2. A time resolution better than 22 ns, expressed as Gaussian σ is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.

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DOI: 10.1016/j.nima.2018.07.044
Zitationen: 2
Web of Science
Zitationen: 2
Zugehörige Institution(en) am KIT Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 10.2018
Sprache Englisch
Identifikator ISSN: 0168-9002
KITopen-ID: 1000127181
HGF-Programm 54.02.03 (POF III, LK 01) ASICs und Integrationstechnologien
Erschienen in Nuclear instruments & methods in physics research / A
Verlag North-Holland
Band 905
Seiten 53–60
Nachgewiesen in Web of Science
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