# Combining TCAD and Monte Carlo methods to simulate CMOS pixel sensors with a small collection electrode using the Allpix$^{2}$ framework

Dannheim, D.; Dort, K.; Hynds, D.; Munker, M.; Nürnberg, A.; Snoeys, W.; Spannagel, S.

##### Abstract:
Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detector characteristics.

In this paper, a CMOS pixel sensor with small collection electrode design, implemented in a high-resistivity epitaxial layer, is simulated by integrating a detailed electric field model from finite element TCAD into a Monte Carlo based simulation with the framework. The simulation results are compared to data recorded in test-beam measurements and very good agreement is found for various quantities such as cluster size, spatial resolution and efficiency. Furthermore, the observables are studied as a function of the intra-pixel incidence position to enable a detailed comparison with the detector behavior observed in data.

The validation of such simulations is fundamental for modeling the detector response and for predicting the performance of future prototype designs. ... mehr

 Zugehörige Institution(en) am KIT Institut für Experimentelle Teilchenphysik (ETP) Publikationstyp Zeitschriftenaufsatz Publikationsmonat/-jahr 06.2020 Sprache Englisch Identifikator ISSN: 0168-9002 KITopen-ID: 1000130106 Erschienen in Nuclear instruments & methods in physics research / A Verlag North-Holland Band 964 Seiten Art.-Nr.: 163784 Schlagwörter Simulation; Monte Carlo; Silicon detectors; High resistivity CMOS; TCAD; Drift-diffusion; Geant4 Nachgewiesen in ScopusDimensionsWeb of Science
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