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Impact of NCFET on Neural Network Accelerators

Zervakis, Georgios; Anagnostopoulos, Iraklis; Salamin, Sami; Chauhan, Yogesh S.; Henkel, Jörg; Amrouch, Hussam

Abstract:
This is the first work to investigate the impact that Negative Capacitance Field-Effect Transistor (NCFET) brings on the efficiency and accuracy of future Neural Networks (NN). NCFET is at the forefront of emerging technologies, especially after it has become compatible with the existing fabrication process of CMOS. Neural Network inference accelerators are becoming ubiquitous in modern SoCs and there is an ever-increasing demand for tighter and tighter throughput constraints and lower energy consumption. To explore the benefits that NCFET brings to NN inference regarding frequency, energy, and accuracy, we investigate different configurations of the multiply-add (MADD) circuit, which is the core computational unit in any NN accelerator. We demonstrate that, compared to the baseline 7nm FinFET technology, its negative capacitance counterpart reduces the energy by 55%, without any frequency reduction. In addition, it enables leveraging higher computational precision, which results to a considerable improvement in the inference accuracy. Importantly, the achieved accuracy improvement comes also together with a significant energy reduction and without any loss in frequency.

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Verlagsausgabe §
DOI: 10.5445/IR/1000131169
Veröffentlicht am 12.04.2021
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Technische Informatik (ITEC)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2021
Sprache Englisch
Identifikator ISSN: 2169-3536
KITopen-ID: 1000131169
Erschienen in IEEE Access
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Band 9
Seiten 43748-43758
Nachgewiesen in Scopus
Web of Science
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