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Influence of surface damage and bulk defects on the interstrip isolation of p-type silicon strip sensors

Müller-Gosewisch, J.-O.; Dierlamm, A. ORCID iD icon; Nürnberg, A.


Silicon strip sensors of upcoming tracking detectors in high luminosity colliders usually consist of a p-doped bulk with n-type strip implants. The general consensus is that such a design requires an additional interstrip isolation structure such as a p-stop implant. If there is no additional implant between the strips, it is expected that the strip isolation will be insufficient. Before irradiation, impurities and defects in the material lead to positive charge in the oxide and Si/SiO_2 interface which attracts electrons from the bulk. Those electrons accumulate just beneath the surface and between the n+ strip or pixel implants, which decreases the interstrip resistance significantly. Ionising radiation introduces even more charge inside the silicon dioxide, which further decreases the interstrip resistance. Contrary to that expectation of a decreasing interstrip resistance due to irradiation, a high interstrip resistance was sometimes observed after proton irradiation. Hence, bulk defects induced by proton irradiation seem to have a non-negligible impact on the strip isolation. Therefore, an irradiation campaign with sensors without any interstrip isolation implant has been performed. ... mehr

DOI: 10.1088/1748-0221/16/07/P07004
Zitationen: 1
Web of Science
Zitationen: 1
Zitationen: 2
Zugehörige Institution(en) am KIT Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Institut für Theoretische Teilchenphysik (TTP)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 07.2021
Sprache Englisch
Identifikator ISSN: 1748-0221
KITopen-ID: 1000139546
HGF-Programm 54.12.01 (POF IV, LK 01) Detection and Measurement
Erschienen in Journal of Instrumentation
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 16
Heft 7
Seiten Art. Nr.: P07004
Vorab online veröffentlicht am 02.07.2021
Schlagwörter Detector modelling and simulations II (electric fields, charge transport, multiplication, and induction, pulse formation, electron emission, etc); Radiation damage to detector materials (solid state); Si microstrip and pad detectors
Nachgewiesen in Dimensions
Web of Science
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