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Understanding Grain Boundary Electrical Resistivity in Cu: The Effect of Boundary Structure

Bishara, Hanna; Lee, Subin; Brink, Tobias; Ghidelli, Matteo; Dehm, Gerhard


Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct atomic arrangement compared to the grain interior. While the GB structure has a crucial influence on the electrical properties, its relationship with resistivity is poorly understood. Here, we perform a systematic study on the resistivity–structure relationship in Cu tilt GBs, employing high-resolution in situ electrical measurements coupled with atomic structure analysis of the GBs. Excess volume and energies of selected GBs are calculated using molecular dynamics simulations. We find a consistent relation between the coincidence site lattice (CSL) type of the GB and its resistivity. The most resistive GBs are in the high range of low-angle GBs (14°–18°) with twice the resistivity of high angle tilt GBs, due to the high dislocation density and corresponding strain fields. Regarding the atomistic structure, GB resistivity approximately correlates with the GB excess volume. Moreover, we show that GB curvature increases resistivity by ∼80%, while phase variations and defects within the same CSL type do not considerably change it.

Verlagsausgabe §
DOI: 10.5445/IR/1000141355
Veröffentlicht am 18.12.2021
DOI: 10.1021/acsnano.1c06367
Zitationen: 74
Web of Science
Zitationen: 66
Zitationen: 81
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Angewandte Materialien – Werkstoff- und Grenzflächenmechanik (IAM-MMI)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 26.10.2021
Sprache Englisch
Identifikator ISSN: 1936-0851, 1936-086X
KITopen-ID: 1000141355
HGF-Programm 43.31.01 (POF IV, LK 01) Multifunctionality Molecular Design & Material Architecture
Erschienen in ACS nano
Verlag American Chemical Society (ACS)
Band 15
Heft 10
Seiten 16607–16615
Vorab online veröffentlicht am 04.10.2021
Nachgewiesen in Dimensions
Web of Science
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