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Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer

Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Hudyakov, Y.; Radam Ali, O.; Arsentyev, I.; Leiste, H.


360 nm and 700 nm thick GaAs layers were grown by MO MOCVD growth technique directly on compliant Si (100) substrate and on supper-lattice (SL) AlGaAs buffer layer. The XRD study revealed better structural quality for the sample grown on SL / por-Si buffer. AFM study revealed a smoother sample surface with blocks of more regular rectangular shape and larger size as well. Photoluminescence spectra of the samples revealed an energy shift of PL maximum intensity for both samples. Sample grown on SL buffer also showed higher PL intensity corresponding to better crystalline perfection.

Verlagsausgabe §
DOI: 10.5445/IR/1000142141
Veröffentlicht am 20.01.2022
DOI: 10.1088/1742-6596/2086/1/012046
Zitationen: 1
Zitationen: 1
Cover der Publikation
Zugehörige Institution(en) am KIT Karlsruhe Nano Micro Facility (KNMF)
Publikationstyp Proceedingsbeitrag
Publikationsjahr 2021
Sprache Englisch
Identifikator ISSN: 1742-6588
KITopen-ID: 1000142141
Erschienen in 8th International School and Conference "Saint Petersburg OPEN 2021": Optoelectronics, Photonics, Engineering and Nanostructures (SPbOPEN 2021) 25-28 May 2021, Saint Petersburg, Russia. Ed.: M. V. Maximov
Veranstaltung 8th International School and Conference Saint Petersburg OPEN (2021), Sankt Petersburg, Russland, 25.05.2021 – 28.05.2021
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Seiten Art.-Nr.: 012046
Serie Journal of Physics: Conference Series ; 2086
Nachgewiesen in Scopus
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