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Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method

So, Byeongchan ORCID iD icon; Lee, Junchae; Cheon, Changheon; Lee, Joohyung; Choi, Uiho; Kim, Minho; Song, Jindong; Chang, Joonyeon; Nam, Okhyun


Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH$_3$ pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors.

Verlagsausgabe §
DOI: 10.5445/IR/1000142892
Veröffentlicht am 09.02.2022
DOI: 10.1063/5.0042631
Zitationen: 2
Web of Science
Zitationen: 2
Zitationen: 2
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 04.2021
Sprache Englisch
Identifikator ISSN: 2158-3226
KITopen-ID: 1000142892
Erschienen in AIP Advances
Verlag American Institute of Physics (AIP)
Band 11
Heft 4
Seiten Art.-Nr.: 045036
Nachgewiesen in Dimensions
Web of Science
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