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Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping

Yoo, Sung Tae; So, Byeongchan ORCID iD icon; Lee, Hye In; Nam, Okhyun; Chang Park, Kyu

Abstract:

Large area deep ultraviolet (DUV) light is generated by carbon nanotube (CNT) cold cathode electron beam (C-beam) irradiation on Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum wells (MQWs) anode. We developed areal electron beam (EB) with CNT cold cathode emitters. The CNT emitters on silicon wafer were deposited with an area of 188 mm2 , and these were vertically aligned and had conical structures. We optimized the C-beam irradiation conditions to effectively excite AlGaN MQWs. When AlGaN MQWs were excited using an anode voltage of 3 kV and an anode current of 0.8 mA, DUV with a wavelength of 278.7 nm was generated in a large area of 303 mm2 . This DUV area is more than 11 times larger than the light emitting area of conventional EB pumped light sources and UV-LEDs.

Zugehörige Institution(en) am KIT Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 07.2019
Sprache Englisch
Identifikator ISSN: 2158-3226
KITopen-ID: 1000142904
Erschienen in AIP Advances
Verlag American Institute of Physics (AIP)
Band 9
Heft 7
Seiten Art.-Nr.: 075104
Nachgewiesen in Dimensions
Scopus
Web of Science

Verlagsausgabe §
DOI: 10.5445/IR/1000142904
Veröffentlicht am 09.02.2022
Originalveröffentlichung
DOI: 10.1063/1.5109956
Scopus
Zitationen: 13
Web of Science
Zitationen: 13
Dimensions
Zitationen: 11
Seitenaufrufe: 80
seit 10.02.2022
Downloads: 86
seit 10.02.2022
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