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Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers

Neininger, Philipp; John, L.; Zink, M.; Meder, D.; Kuri, M.; Tessmann, A.; Friesicke, C.; Mikulla, M.; Quay, R.; Zwick, Thomas 1
1 Institut für Hochfrequenztechnik und Elektronik (IHE), Karlsruher Institut für Technologie (KIT)

Abstract:

In this letter, we report on the realization of a two-stage 16-way solid-state power amplifier (SSPA) in the Ka-band. To this end, we describe the design of a high-power amplifier (HPA) in a 100-nm gallium nitride (GaN) process and its integration into a split-block waveguide module. The PA module achieves an output power of more than 7.6 W between 28 and 39 GHz. In conjunction with 16 of these PA modules, we then employed a custom low-loss radial splitter and combiner to create a compact SSPA system. The two-stage SSPA configuration exhibits a small-signal gain of up to 44 dB and a peak output power of 127 W at 31 GHz in 5 dB of gain compression. Furthermore, we measured output power of close to 100 W and state-of-the-art efficiency values of more than 19% between 28 and 38 GHz. To our knowledge, this is the most broadband high-power SSPA demonstrated so far in this frequency range.


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Originalveröffentlichung
DOI: 10.1109/LMWC.2022.3166563
Scopus
Zitationen: 7
Web of Science
Zitationen: 5
Dimensions
Zitationen: 9
Zugehörige Institution(en) am KIT Institut für Hochfrequenztechnik und Elektronik (IHE)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2022
Sprache Englisch
Identifikator ISSN: 1531-1309, 1051-8207, 1558-1764, 1558-2329
KITopen-ID: 1000146538
Erschienen in IEEE Microwave and Wireless Components Letters
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Band 32
Heft 6
Seiten 708 - 711
Vorab online veröffentlicht am 27.04.2022
Nachgewiesen in Web of Science
Scopus
Dimensions
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