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OES diagnostics as a universal technique to control the Si etching structures profile in ICP

Osipov, Artem A.; Iankevich, Gleb A. 1; Speshilova, Anastasia B.; Gagaeva, Alina E.; Osipov, Armenak A.; Enns, Yakov B.; Kazakin, Alexey N.; Endiiarova, Ekaterina V.; Belyanov, Ilya A.; Ivanov, Viktor I.; Alexandrov, Sergey E.
1 Institut für Nanotechnologie (INT), Karlsruher Institut für Technologie (KIT)

Abstract:

In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF$_{6}$/C$_{4}$F$_{8}$/O$_{2}$ plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 μm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2–6, and for structures from 400 to 4000 μm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5–2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated.


Verlagsausgabe §
DOI: 10.5445/IR/1000146684
Veröffentlicht am 24.05.2022
Originalveröffentlichung
DOI: 10.1038/s41598-022-09266-x
Scopus
Zitationen: 6
Web of Science
Zitationen: 3
Dimensions
Zitationen: 6
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 12.2022
Sprache Englisch
Identifikator ISSN: 2045-2322
KITopen-ID: 1000146684
HGF-Programm 43.31.01 (POF IV, LK 01) Multifunctionality Molecular Design & Material Architecture
Erschienen in Scientific Reports
Verlag Nature Research
Band 12
Heft 1
Seiten Art. Nr.: 5287
Bemerkung zur Veröffentlichung Gefördert durch den KIT-Publikationsfonds
Vorab online veröffentlicht am 28.03.2022
Nachgewiesen in Scopus
Web of Science
Dimensions
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