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Electrostatic treatment of charged interfaces in classical atomistic simulations

Tao, Cong 1; Mutter, Daniel ; Urban, Daniel F.; Elsässer, Christian
1 Institut für Angewandte Materialien – Computational Materials Science (IAM-CMS), Karlsruher Institut für Technologie (KIT)

Abstract:

Artificial electrostatic potentials can be present in supercells constructed for atomistic simulations of surfaces and interfaces in ionic crystals. Treating the ions as point charges, we systematically derive an electrostatic formalism for model systems of increasing complexity, both neutral and charged, and with either open or periodic boundary conditions. This allows to correctly interpret results of classical atomistic simulations which are directly affected by the appearance of these potentials. We demonstrate our approach at the example of a strontium titanite supercell containing an asymmetric tilt grain boundary. The formation energies of charged oxygen vacancies and the relaxed interface structure are calculated based on an interatomic rigid-ion potential, and the results are analyzed in consideration of the electrostatic effects.


Verlagsausgabe §
DOI: 10.5445/IR/1000148634
Originalveröffentlichung
DOI: 10.1088/1361-651X/ac6e79
Scopus
Zitationen: 2
Dimensions
Zitationen: 2
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Angewandte Materialien – Computational Materials Science (IAM-CMS)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 01.07.2022
Sprache Englisch
Identifikator ISSN: 0965-0393, 1361-651X
KITopen-ID: 1000148634
Erschienen in Modelling and Simulation in Materials Science and Engineering
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 30
Heft 5
Seiten 055004
Vorab online veröffentlicht am 26.05.2022
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