KIT | KIT-Bibliothek | Impressum | Datenschutz

Irradiation-dependent topology optimization of metallization grid patterns and variation of contact layer thickness used for latitude-based yield gain of thin-film solar modules

Zinßer, Mario ORCID iD icon 1; Braun, Benedikt; Helder, Tim 1; Magorian Friedlmeier, Theresa; Pieters, Bart; Heinlein, Alexander; Denk, Martin; Göddeke, Dominik; Powalla, Michael 1
1 Lichttechnisches Institut (LTI), Karlsruher Institut für Technologie (KIT)

Abstract:

We show that the concept of topology optimization for metallization grid patterns of thin-film solar devices can be applied to monolithically integrated solar cells. Different irradiation intensities favor different topological grid designs as well as a different thickness of the transparent conductive oxide (TCO) layer. For standard laboratory efficiency determination, an irradiation power of 1000W/m$^{2}$ is generally applied. However, this power rarely occurs for real-world solar modules operating at mid-latitude locations. Therefore, contact layer thicknesses and also lateral grid patterns should be optimized for lower irradiation intensities. This results in material production savings for the grid and TCO layer of up to 50 % and simultaneously a significant gain in yield of over 1% for regions with a low annual mean irradiation.


Verlagsausgabe §
DOI: 10.5445/IR/1000150048
Veröffentlicht am 25.08.2022
Originalveröffentlichung
DOI: 10.1557/s43580-022-00321-3
Scopus
Zitationen: 2
Dimensions
Zitationen: 3
Cover der Publikation
Zugehörige Institution(en) am KIT Lichttechnisches Institut (LTI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2022
Sprache Englisch
Identifikator ISSN: 2059-8521
KITopen-ID: 1000150048
Erschienen in MRS Advances
Verlag Cambridge University Press (CUP)
Band 7
Heft 30
Seiten 706–712
Vorab online veröffentlicht am 03.08.2022
Nachgewiesen in Scopus
Dimensions
Globale Ziele für nachhaltige Entwicklung Ziel 7 – Bezahlbare und saubere Energie
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
KITopen Landing Page