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Exploiting flux shadowing for strain and bending engineering in core - shell nanowires

Al-Humaidi, Mahmoud 1,2; Jakob, Julian 1,2; Al Hassan, Ali 2; Davtyan, Arman; Schroth, Philipp 2; Feigl, Ludwig 2; Herranz, Jesús; Novikov, Dmitri; Geelhaar, Lutz; Pietsch, Ullrich; Baumbach, Tilo 1,2
1 Laboratorium für Applikationen der Synchrotronstrahlung (LAS), Karlsruher Institut für Technologie (KIT)
2 Institut für Photonenforschung und Synchrotronstrahlung (IPS), Karlsruher Institut für Technologie (KIT)

Abstract:

Here we report on the non-uniform shell growth of In$_x$Ga$_{1−x}$As on the GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with the pitch size (p) ranging from 0.1 μm to 10 μm. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we were able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with a high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strained) segments with different lengths which depend on the pitch size. A precise control of the bent and straight NW segment length provides a method to design NW based devices with length selective strain distribution.


Verlagsausgabe §
DOI: 10.5445/IR/1000153353/pub
Veröffentlicht am 31.01.2023
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Laboratorium für Applikationen der Synchrotronstrahlung (LAS)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2022
Sprache Englisch
Identifikator ISSN: 2040-3364, 2040-3372
KITopen-ID: 1000153353
HGF-Programm 56.12.11 (POF IV, LK 01) Materials - Quantum, Complex and Functional
Erschienen in Nanoscale
Verlag Royal Society of Chemistry (RSC)
Band 15
Heft 5
Seiten 2254-2261
Vorab online veröffentlicht am 02.11.2022
Nachgewiesen in Web of Science
Dimensions
Scopus
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