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Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

Kieseler, Jan 1; Dias de Almeida, Pedro Gonçalo; Kałuzińska, Oliwia Agnieszka 2; Mühlnikel, Marie Christin; Diehl, Leena; Sicking, Eva; Zehetner, Philipp
1 Institut für Experimentelle Teilchenphysik (ETP), Karlsruher Institut für Technologie (KIT)
2 Fakultät für Elektrotechnik und Informationstechnik (ETIT), Karlsruher Institut für Technologie (KIT)

Abstract:

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from 6.5 · 10$^{14}$ to 1 · 10$^{16}$ n$_{eq}$/cm$^2$.


Verlagsausgabe §
DOI: 10.5445/IR/1000162619
Veröffentlicht am 29.09.2023
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Experimentelle Teilchenphysik (ETP)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 01.09.2023
Sprache Englisch
Identifikator ISSN: 1748-0221
KITopen-ID: 1000162619
Erschienen in Journal of Instrumentation
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 18
Heft 09
Seiten Art.Nr.: P09010
Schlagwörter Radiation-hard detectors, Si microstrip and pad detectors
Nachgewiesen in Scopus
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