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Critical Discussion of Ex situ and In situ TEM Measurements on Memristive Devices

Gronenberg, O.; Haberfehlner, G.; Zahari, F.; Marquardt, R.; Kübel, Christian ORCID iD icon 1,2; Kothleitner, G.; Kienle, L.
1 Institut für Nanotechnologie (INT), Karlsruher Institut für Technologie (KIT)
2 Karlsruhe Nano Micro Facility (KNMF), Karlsruher Institut für Technologie (KIT)

Abstract:

Memristors are promising candidates for new memory technologies and are capable to mimic synapses in artificial neural networks. The switching in memristive devices occurs typically in few nanometer thin dielectric layers. The direct observation of the switching mechanism is crucial for better comprehension and improvements of memristors. Therefore, in situ experiments are conducted in a transmission electron microscope (TEM). However, sample preparation processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variability due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis.


Verlagsausgabe §
DOI: 10.5445/IR/1000162884
Veröffentlicht am 09.10.2023
Originalveröffentlichung
DOI: 10.1007/978-3-031-36705-2
Dimensions
Zitationen: 1
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Karlsruhe Nano Micro Facility (KNMF)
Publikationstyp Buchaufsatz
Publikationsjahr 2023
Sprache Englisch
Identifikator ISBN: 978-3-031-36704-5
ISSN: 2520-8535
KITopen-ID: 1000162884
HGF-Programm 43.35.03 (POF IV, LK 01) Structural and Functional Behavior of Solid State Systems
Erschienen in Bioinspired Information Pathways. Hrsg.: M. Ziegler
Verlag Springer International Publishing
Seiten 129-157
Serie Springer Series on Bio- and Neurosystems ; 16
Vorab online veröffentlicht am 20.09.2023
Schlagwörter 2019-023-028149; 2018-019-021449; 2015-014-008134; 2015-014-006790; TEM, FIB
Nachgewiesen in Dimensions
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