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Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield

Chin, Robert Lee; Soufiani, Arman Mahboubi; Fassl, Paul ORCID iD icon 1; Zheng, Jianghui; Choi, Eunyoung; Ho-Baillie, Anita; Paetzold, Ulrich ORCID iD icon 1; Trupke, Thorsten; Hameiri, Ziv
1 Institut für Mikrostrukturtechnik (IMT), Karlsruher Institut für Technologie (KIT)

Abstract:

We present a novel analytical model for analysing the spectral photoluminescence quantum yield of non-planar semiconductor thin films. This model considers the escape probability of luminescence and is applied to triple-cation perovskite thin films with a 1-Sun photoluminescence quantum yield approaching 25%. By using our model, we can decouple the internal radiative, external radiative, and non-radiative bi-molecular recombination coefficients. Unlike other techniques that measure these coefficients separately, our proposed method circumvents experimental uncertainties by avoiding the need for multiple photoluminescence measurement techniques. We validate our model by comparing the extracted implied open-circuit voltage, effective luminescence escape probabilities, absorptivity, and absorption coefficient with values obtained using established methods and found that our results are consistent with previous findings. Next, we compare the implied 1-Sun radiative open-circuit voltage and radiative recombination current obtained from our method with literature values. We then convert the implied open-circuit voltage and implied radiative open-circuit voltage to the injection-dependent apparent-effective and apparent-radiative carrier lifetimes, which allow us to decouple the different recombination coefficients. ... mehr


Volltext §
DOI: 10.5445/IR/1000167163
Veröffentlicht am 10.01.2024
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Publikationstyp Forschungsbericht/Preprint
Publikationsjahr 2023
Sprache Englisch
Identifikator KITopen-ID: 1000167163
HGF-Programm 38.01.05 (POF IV, LK 01) Simulations, Theory, Optics and Analytics (STOA)
Verlag arxiv
Umfang 36 S.
Schlagwörter Materials Science (cond-mat.mtrl-sci), Optics (physics.optics)
Nachgewiesen in Dimensions
arXiv
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