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Dendrite Formation in Power Electronics Packages during HV-H3TRB Testing due to Flux Residue

Steiner, Felix ORCID iD icon 1; Blank, Thomas ORCID iD icon 1; Ishikawa, Dai; Nakako, Hideo
1 Institut für Prozessdatenverarbeitung und Elektronik (IPE), Karlsruher Institut für Technologie (KIT)

Abstract:

In previous HV-H3TRB testing, severe dendrite growth was observed on power MOSFETs. In this work, we investigated the influence of solder flux residue on the growth of dendrites in power modules. HV-H3TRB testing of commercial power modules yields visible damage to the devices, while electrical performance remains acceptable. Intentional contamination with solder flux did not affect the modules. Further testing with silver and copper test structures revealed that flux residue and other contaminants cause dendrite formation in the presence of silver metal and can be eliminated by appropriate cleaning steps.


Originalveröffentlichung
DOI: 10.23919/ICEP61562.2024.10535544
Zugehörige Institution(en) am KIT Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Proceedingsbeitrag
Publikationsdatum 17.04.2024
Sprache Englisch
Identifikator ISBN: 978-4-9911911-7-6
KITopen-ID: 1000171661
Erschienen in 2024 International Conference on Electronics Packaging (ICEP)
Veranstaltung International Conference on Electronics Packaging (ICEP 2024), Toyama, Japan, 17.04.2024 – 20.04.2024
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Seiten 31–32
Schlagwörter HV-H3TRB, Metal dendrites, power electronics, packaging, reliability
Nachgewiesen in Scopus
Dimensions
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