Test-beam performance of a proton-irradiated, large-scale depleted monolithic active pixel sensors (DMAPS) in 150 nm CMOS technology

The increasing availability of high-resistivity substrates and large biasing voltage capabilities in commercial CMOS processes encourage the use of depleted monolithic activate pixel sensors (DMAPS) in high-energy physics experiments. LF-Monopix2 is the latest iteration of a DMAPS development line designed in 150nm LFoundry technology, which features a large scale (1×2)cm$^2$ chip size divided into (56×340) pixels with a pitch of (150×50)µm$^2$. Implementation of the full pixel electronic circuitry within a large charge collection node compromises the sensor's noise and power budget while assuring short drift distances and a homogeneous electric field in the sensing part of the detector that increase the radiation hardness. Laboratory characterization and beam test performance of 100µm thick LF-Monopix2 sensors with backside processing and irradiated to 1×10$^{15}$n$_{eq}$cm$^{-2}$ of NIEL fluence are presented.