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Electrically‐Switchable Gain in Optically Pumped CsPbBr3 Lasers With Low Threshold at Nanosecond Pumping

Li, Yang 1,2; Liu, Shangpu 2; Feeney, Thomas ORCID iD icon 1,2; Roger, Julie 1,2; Gholipoor, Mohammad 1,2; Hu, Hang ORCID iD icon 1,2; Zhao, Dewei; Howard, Ian 2; Deschler, Felix ; Lemmer, Uli 1,2; Paetzold, Ulrich W. ORCID iD icon 1,2
1 Lichttechnisches Institut (LTI), Karlsruher Institut für Technologie (KIT)
2 Institut für Mikrostrukturtechnik (IMT), Karlsruher Institut für Technologie (KIT)

Abstract:

Metal halide perovskites hold promise for nonepitaxial laser diodes, yet, continuous-wave (CW) optically pumped (photonic) lasing in CsPbBr3 remains elusive despite its superior thermal- and photo-stability among the perovskite family. This work reports on CsPbBr3 vertical cavity surface emitting lasers with low lasing thresholds (1.3 µJ cm2) at nanosecond pumping and remarkable lasing stability. Furthermore, the electrically switchable gain is achieved in CsPbBr3 electrically assisted optically pumped laser (EAOPL) devices by leveraging ion migration. Applying a small positive DC voltage to the EAOPL device significantly reduces the lasing threshold under nanosecond laser excitation and enhances the cavity mode intensity at CW laser excitation. These findings present a novel strategy, combining a small DC voltage with an electrical pulse, for exploring electrical injection lasing in CsPbBr3 perovskites.

Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Lichttechnisches Institut (LTI)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 26.03.2025
Sprache Englisch
Identifikator ISSN: 1613-6810, 1613-6829
KITopen-ID: 1000180331
Erschienen in Small
Verlag John Wiley and Sons
Band 21
Heft 12
Vorab online veröffentlicht am 24.02.2025
Nachgewiesen in Scopus
Web of Science
OpenAlex
Dimensions

Verlagsausgabe §
DOI: 10.5445/IR/1000180331
Veröffentlicht am 27.03.2025
Seitenaufrufe: 15
seit 27.03.2025
Downloads: 8
seit 28.03.2025
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