Fully printable oxide TFTs and memristors on rigid and flexible substrates with excellent integration properties for hybrid systems

Recent advances in inorganic oxide electronics exploiting metal oxides as semiconducting channel materials show a rich portfolio of functional electronic devices and integration possibilities enabling future applications in security, robotics, the display and health sector. We report on fully additively manufactured, composite polymer electrolyte gated in indium (In2O3) oxide thin film transistors combining aerosol-jet and inkjet printing as well as integrated circuits such as physical unclonable functions, ring oscillators and hybrid flexible systems for temperature sensing. In the more complex systems, we show that our printed transistor can be integrated also with silicon discrete components as well as thinned ICs and work reliably at low voltages (<2V). Finally, we present results on printed resistive switching devices (memristors) with fast switching speeds (~ns) and high Ron/Roff values (~107) which will further boost the potential of all printed oxide circuits in the future.