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Advanced microwave SQUID multiplexer model incorporating readout power effects and Josephson junction inhomogeneities

Neidig, M. 1; Wegner, M. ORCID iD icon 1,2; Kempf, S. 1,2
1 Institut für Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut für Technologie (KIT)
2 Institut für Prozessdatenverarbeitung und Elektronik (IPE), Karlsruher Institut für Technologie (KIT)

Abstract:

We present an advanced model for describing the readout power dependence of the resonance characteristics of a microwave SQUID multiplexer. Our model proves valid for SQUID screening parameters up to β$_L$ < 1, hence covering the full range of practically relevant design parameters. We demonstrate that our model significantly improves agreement with experimental data compared to the existing models, thereby enabling optimization beyond the previously accessible parameter space. Moreover, our model supports non-sinusoidal current-phase relations of the rf-SQUID’s Josephson junction, allowing, for the first time, for the modeling of devices based on
Josephson tunnel junctions with inhomogeneous tunnel barriers. We show that the effects of such inhomogeneities are qualitatively similar to, yet distinct from, those of the screening parameter, making their inclusion essential for accurate characterization. Incorporating these effects yields great improved agreement with measurements, even at readout power conditions well beyond typical operating parameters.


Verlagsausgabe §
DOI: 10.5445/IR/1000192240
Veröffentlicht am 16.04.2026
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Mikro- und Nanoelektronische Systeme (IMS)
Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 01.04.2026
Sprache Englisch
Identifikator ISSN: 0953-2048, 1361-6668
KITopen-ID: 1000192240
Erschienen in Superconductor Science and Technology
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 39
Heft 4
Seiten Art.-Nr.: 045003
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