KIT | KIT-Bibliothek | Impressum | Datenschutz

O-Band Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulator Operating at a PAM4 Line Rate of 384 Gbit/s with Sub-Volt Drive Voltage

Schwarzenberger, A. ORCID iD icon 1; Sarwar, S. 2; Eschenbaum, C.; Mertens, A.; Martens, M.; Grünewald, L. ORCID iD icon 3; Kotz, A. ORCID iD icon 1; Fang, D. ORCID iD icon 1; Sherifaj, A. 1; Singer, S. ORCID iD icon 1; Kholeif, H. 1,4; Kern, P. 4; Erk, P.; Kuzmin, A. ORCID iD icon 1,4; Eggeler, Y. M. ORCID iD icon 3; Bräse, S. ORCID iD icon 4; Randel, S. 1; Freude, W. 1; Koos, C. 1
1 Institut für Photonik und Quantenelektronik (IPQ), Karlsruher Institut für Technologie (KIT)
2 Institut für Mikrostrukturtechnik (IMT), Karlsruher Institut für Technologie (KIT)
3 Laboratorium für Elektronenmikroskopie (LEM), Karlsruher Institut für Technologie (KIT)
4 Institut für Organische Chemie (IOC), Karlsruher Institut für Technologie (KIT)

Abstract:

Optical transceivers for exa-scale datacenters and artificial intelligence (AI) clusters need to be compact, efficient, and amenable to low-cost mass production. In this context, the silicon-organic hybrid (SOH) platform is a particularly attractive option for implementing the underlying electro-optic modulators, combining the inherent scalability of silicon photonics with ultra-strong Pockels-type nonlinearities offered by advanced organic electro-optic materials. However, while SOH Mach-Zehnder modulators (MZM) have shown outstanding performance for high-speed transmission in the telecommunication C-band around 1550 nm, the O-band around 1310 nm is much less explored, even though it is much better suited for technically simple but dispersion-sensitive intensity modulation and direct detection (IMDD) schemes. In this paper, we demonstrate SOH MZM that have been specifically designed for high-speed IMDD transmission in the O-band, offering π-voltage-length products of UπL = 0.46 Vmm. Using a 500 μm-long MZM and a drive signal with a 950 mVpp peak-to-peak swing, we demonstrate 192 GBd PAM4 transmission at a line rate of 384 Gbit/s. This corresponds to both a record-high line rate and a record-low drive voltage for O-band MZM on the silicon photonic platform.


Originalveröffentlichung
DOI: 10.1109/JSTQE.2026.3684861
Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Institut für Organische Chemie (IOC)
Institut für Photonik und Quantenelektronik (IPQ)
Laboratorium für Elektronenmikroskopie (LEM)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2026
Sprache Englisch
Identifikator ISSN: 1077-260X, 1558-4542
KITopen-ID: 1000192958
Erschienen in IEEE Journal of Selected Topics in Quantum Electronics
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Seiten 1–16
Vorab online veröffentlicht am 16.04.2026
Externe Relationen Siehe auch
Schlagwörter Optical devices, optical fiber communications, integrated optics, electro-optic modulators, silicon photonics, optical interconnects, intensity modulation
Nachgewiesen in Scopus
OpenAlex
KIT – Die Universität in der Helmholtz-Gemeinschaft
KITopen Landing Page