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Thermo-NAS: Thermal-resilient ultralow-cost IGZO-based Flexible Neuromorphic Circuits

Pal, Priyanjana ORCID iD icon 1; Gheshlaghi, Tara ORCID iD icon 1; Balaji, Suman; Ozer, Emre; Tahoori, Mehdi B. 1
1 Institut für Technische Informatik (ITEC), Karlsruher Institut für Technologie (KIT)

Abstract:

The demand for next-generation flexible electronics (FE) is rapidly increasing, especially in cost-sensitive consumer markets such as smart packaging, smart bandages, drug delivery systems, RFID tags, and wearable devices. Traditional silicon based electronics, constrained by high manufacturing costs and rigid form-factor, are inadequate for these emerging applications. However, the lack of rigid packaging in FE, combined with their complex and variable operating conditions, makes them more susceptible to thermal issues, therby leading to significant performance degradation, abnormal heating, and potential risks to device reliability and safety. To address these thermal challenges, we propose a novel approach to design thermal-resilient (TR) flexible analog neuromorphic circuits (f-NCs) based on amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). This cross-layer approach integrates TR circuit design for activation functions (AFs) and evolutionary algorithm (EA) based TR training using Neural Architecture Search (NAS) optimizing both the circuit-level thermal resilience and the architecture level training, ensuring robust performance of $f$-NCs under varying thermal conditions. ... mehr


Originalveröffentlichung
DOI: 10.1109/ASP-DAC66049.2026.11420652
Zugehörige Institution(en) am KIT Institut für Technische Informatik (ITEC)
Publikationstyp Proceedingsbeitrag
Publikationsdatum 19.01.2026
Sprache Englisch
Identifikator ISBN: 979-8-3315-9123-6
ISSN: 2153-6961
KITopen-ID: 1000194764
Erschienen in 2026 31st Asia and South Pacific Design Automation Conference (ASP-DAC)
Veranstaltung 31st Asia and South Pacific Design Automation Conference (ASP-DAC 2026), Hongkong, Hongkong, 19.01.2026 – 22.01.2026
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Seiten 244 - 250
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