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Algorithm–Technology Co-Optimization for Reliable NVM-CAM Systems

Nezhadi, Ali ORCID iD icon 1; Mamaghani, Sina Bakhtavari 1; Tahoori, Mehdi 1
1 Institut für Technische Informatik (ITEC), Karlsruher Institut für Technologie (KIT)

Abstract:

In-memory content addressable memories (CAMs) offer an efficient hardware-based approach to accelerate search operations in data-intensive workloads. Non-volatile memory (NVM)-based CAMs, with their high density, low standby power, and CMOS compatibility, enable energy-efficient realization of large-scale in-memory CAMs. However, resistive nature of NVMs results in unacceptably high search error rate (SeER) (on the order of 10$^{−4}$) coupled with device-level variability. This paper presents an algorithm–technology co-optimization solution to mitigate SeER, by integrating circuit- and software-level error mitigation strategies. To evaluate the approach on realistic workloads, an open-source simulation platform was developed, supporting full-system analysis and NVM-CAM co-design. Experimental results demonstrate a reliable NVM-CAM achieving 0% SeER without hardware overhead, matching the SeER of an ideal NVM-CAM, with only a small increase in runtime and energy of 6% and 4%, respectively.


Originalveröffentlichung
DOI: 10.1109/VTS69484.2026.11563404
Zugehörige Institution(en) am KIT Institut für Technische Informatik (ITEC)
Publikationstyp Proceedingsbeitrag
Publikationsjahr 2026
Sprache Englisch
Identifikator ISBN: 979-8-3315-6338-7
ISSN: 1093-0167
KITopen-ID: 1000195145
Erschienen in 2026 IEEE 44th VLSI Test Symposium (VTS), Napa, CA, 27th-29th April 2026
Veranstaltung 44th IEEE VLSI Test Symposium (VTS 2026), Napa, CA, USA, 27.04.2026 – 29.04.2026
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Seiten 1–7
Vorab online veröffentlicht am 18.06.2026
Externe Relationen Siehe auch
Schlagwörter CAM, NVM, STT-MRAM, ReRAM
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