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Dielectric properties of Fe-doped BaₓSr₁₋ₓ TiO₃ thin films on polycrystalline substrates at temperatures between -35 and +85°C

Lorenz, M.; Hochmuth, H.; Schallner, M.; Heidinger, R.; Spemann, D.; Grundmann, M.

Large-area BaₓSr₁₋ₓ TiO₃ (BSTO-x) thin films, doped with Fe, Mg, and Y, have been grown by pulsed laser deposition (PLD) on polycrystalline alumina based ceramics. The capacity and Q-factor of planar Pt / BTO:Fe / Pt capacitors were investigated within a temperature range from -35 to +85° C for applied DC-bias voltages up to 10V at 1kHz. A homogeneous tunability of the capacity of about 60 % was achieved for applied electrical field strengths between 0 and 5V/ mm. Furthermore, by Fe-doping of BTO films and post-deposition annealing of the Pt / BTO / Pt structure the Q-factors could be increased by a factor of four up to 200 compared to the undoped films. However, at a microwave frequency of 30 GHz, higher values of the Q-factor of more than 300 at room temperature were measured for bare BSTO-0.45 films. These results show the considerable influence of the interface, doping material and post-deposition treatment on the dielectric thin film properties. The physical reasons for this behavior are not completely understood up to now. Supported by the BMBF under FKZ 13N8158.

DOI: 10.1016/S0038-1101(03)00197-7
Zitationen: 23
Zitationen: 21
Zugehörige Institution(en) am KIT Institut für Materialforschung (IMF)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2003
Sprache Englisch
Identifikator ISSN: 0038-1101, 1879-2405
KITopen-ID: 110054001
HGF-Programm 31.04.04 (Vor POF, LK 01)
Erschienen in Solid state electronics
Verlag Elsevier
Band 47
Heft 12
Seiten 2199-2203
Nachgewiesen in Web of Science
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