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DOI: 10.1016/S0038-1101(03)00197-7
Zitationen: 20
Web of Science
Zitationen: 19

Dielectric properties of Fe-doped BaₓSr₁₋ₓ TiO₃ thin films on polycrystalline substrates at temperatures between -35 and +85°C

Lorenz, M.; Hochmuth, H.; Schallner, M.; Heidinger, R.; Spemann, D.; Grundmann, M.

Large-area BaₓSr₁₋ₓ TiO₃ (BSTO-x) thin films, doped with Fe, Mg, and Y, have been grown by pulsed laser deposition (PLD) on polycrystalline alumina based ceramics. The capacity and Q-factor of planar Pt / BTO:Fe / Pt capacitors were investigated within a temperature range from -35 to +85° C for applied DC-bias voltages up to 10V at 1kHz. A homogeneous tunability of the capacity of about 60 % was achieved for applied electrical field strengths between 0 and 5V/ mm. Furthermore, by Fe-doping of BTO films and post-deposition annealing of the Pt / BTO / Pt structure the Q-factors could be increased by a factor of four up to 200 compared to the undoped films. However, at a microwave frequency of 30 GHz, higher values of the Q-factor of more than 300 at room temperature were measured for bare BSTO-0.45 films. These results show the considerable influence of the interface, doping material and post-deposition treatment on the dielectric thin film properties. The physical reasons for this behavior are not completely understood up to now. Supported by the BMBF under FKZ 13N8158.

Zugehörige Institution(en) am KIT Institut für Materialforschung (IMF)
Publikationstyp Zeitschriftenaufsatz
Jahr 2003
Sprache Englisch
Identifikator ISSN: 0038-1101, 1879-2405
KITopen ID: 110054001
HGF-Programm 31.04.04; LK 01
Erschienen in Solid state electronics
Band 47
Heft 12
Seiten 2199-2203
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