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URN: urn:nbn:de:swb:90-AAA1101011847

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

Gutsch, S.; Hiller, D.; Laube, J.; Zacharias, M.; Kübel, C.

Abstract:
We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO$_{2}$ diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.


Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Karlsruhe Nano Micro Facility (KNMF)
Publikationstyp Zeitschriftenaufsatz
Jahr 2015
Sprache Englisch
Identifikator ISSN: 2190-4286
KITopen ID: 110101184
HGF-Programm 49.02.01; LK 02
Erschienen in Beilstein journal of nanotechnology
Band 6
Seiten 964-970
Bemerkung zur Veröffentlichung CCby-Lizenz 2.0
Schlagworte electron irradiation damage, energy-filtered transmission electron microscopy, membrane, plane view, silicon nanocrystals, size control, size distribution
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