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Verlagsausgabe
DOI: 10.5445/IR/120099311
Veröffentlicht am 14.11.2018
Originalveröffentlichung
DOI: 10.1088/1742-6596/425/6/062015
Scopus
Zitationen: 22

Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material

Hamann, E.; Cecilia, A.; Zwerger, A.; Fauler, A.; Tolbanov, O.; Tyazhev, A.; Shelkov, G.; Graafsma, H.; Baumbach, T.; Fiederle, M.

Abstract:
Hybrid semiconductor pixel detectors are considered of high interest for synchrotron applications like diffraction and imaging experiments. However, at photon energies above 30 keV, high-Z sensor materials have to be used due to the weak absorption of the most commonly used sensor material, for instance silicon wafers with a thickness of a few hundred μm. Besides materials like CdTe and Ge, semi-insulating, chromium compensated SI-GaAs(Cr) proves to be a promising sensor material for applications with X-rays in the mid-energy range up to ~60 keV. In this work, material characterisation of SI-GaAs(Cr) wafers by electrical measurements and synchrotron white beam topography as well as the characterization and application of pixel detector assemblies based on Medipix readout chips bump-bonded to 500 μm thick SI-GaAs(Cr) sensors are presented. The results show a very homogeneous material with high resistivity and good electrical properties of the electrons as well as a very promising imaging performance of the detector assemblies.


Zugehörige Institution(en) am KIT ANKA - die Synchrotronstrahlungsquelle am KIT (ANKA)
Publikationstyp Zeitschriftenaufsatz
Jahr 2013
Sprache Englisch
Identifikator ISSN: 1742-6588, 1742-6596
URN: urn:nbn:de:swb:90-AAA1200993118
KITopen-ID: 120099311
HGF-Programm 55.51.10 (POF II, LK 02)
Erschienen in Journal of physics / Conference Series
Band 425
Heft Part 6
Seiten 062015/1-5
Nachgewiesen in Scopus
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