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Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material

Hamann, E. 1; Cecilia, A. 1; Zwerger, A.; Fauler, A.; Tolbanov, O.; Tyazhev, A.; Shelkov, G.; Graafsma, H.; Baumbach, T. 1; Fiederle, M. 1
1 Institut für Photonenforschung und Synchrotronstrahlung (IPS), Karlsruher Institut für Technologie (KIT)


Hybrid semiconductor pixel detectors are considered of high interest for synchrotron applications like diffraction and imaging experiments. However, at photon energies above 30 keV, high-Z sensor materials have to be used due to the weak absorption of the most commonly used sensor material, for instance silicon wafers with a thickness of a few hundred μm. Besides materials like CdTe and Ge, semi-insulating, chromium compensated SI-GaAs(Cr) proves to be a promising sensor material for applications with X-rays in the mid-energy range up to ~60 keV. In this work, material characterisation of SI-GaAs(Cr) wafers by electrical measurements and synchrotron white beam topography as well as the characterization and application of pixel detector assemblies based on Medipix readout chips bump-bonded to 500 μm thick SI-GaAs(Cr) sensors are presented. The results show a very homogeneous material with high resistivity and good electrical properties of the electrons as well as a very promising imaging performance of the detector assemblies.

Verlagsausgabe §
DOI: 10.5445/IR/120099311
Veröffentlicht am 14.11.2018
DOI: 10.1088/1742-6596/425/6/062015
Zitationen: 25
Zitationen: 26
Cover der Publikation
Zugehörige Institution(en) am KIT ANKA - die Synchrotronstrahlungsquelle am KIT (ANKA)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2013
Sprache Englisch
Identifikator ISSN: 1742-6588, 1742-6596
KITopen-ID: 120099311
HGF-Programm 55.51.10 (POF II, LK 02) Betrieb und Entw.d.ANKA Beaml.u.Nutzers.
Erschienen in Journal of physics / Conference Series
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 425
Heft Part 6
Seiten 062015/1-5
Nachgewiesen in Dimensions
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