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Investigation of the (111) surface of P-doped Si by scanning tunneling microscopy

Trappmann, Thomas 1; Sürgers, Christoph 1; Löhneysen, Hilbert von 1
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


The (111) surface of P-doped Si obtained by cleaving in ultrahigh vacuum has been investigated by means of scanning tunneling microscopy at room temperature for samples with dopant concentrations below and above the metal-insulator transition. Domains and extended anti-phase boundaries are observed due to the formation of the 2 x 1 reconstruction. During the scanning process the location of these anti-phase boundaries can change reversibly, suggesting a tip-induced modification of the boundaries. On an atomic scale, individual P atoms in the Si host lattice can be identified because of their voltage-dependent image contrast caused by the Coulomb potential of the ionized donor. This permits an analysis of the spatial arrangement of the donors, which obeys a statistical distribution with a low-distance cut-off, in agreement with the minimum nearest-neighbor distance estimated from the solubility Limit. Significant clustering can be ruled out even for concentrations far above the metal-insulator transition.

DOI: 10.1007/s003390050872
Zitationen: 11
Web of Science
Zitationen: 14
Zitationen: 14
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 1999
Sprache Englisch
Identifikator ISSN: 0947-8396
KITopen-ID: 209999
Erschienen in Applied Physics A
Verlag Springer
Band 68
Heft 2
Seiten 167-172
Bemerkung zur Veröffentlichung Sonderdrucknummer 2000S93
Nachgewiesen in Web of Science
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