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Detection of 14 MeV neutrons in high temperature environment up to 500⁰C using 4H-SiC based diode detector

Szalkai, D.; Ferone, R.; Gehre, D.; Issa, F.; Klix, A.; Lyoussi, A.; Ottaviani, L.; Vermeeren, L.; Vervisch, V.

In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the case of 4H-SiC power devices, the theoretical maximum operating temperature that can be
reached is ~1000 ºC. In practice this limit is determined by the thermal tolerance of the various materials used to form the detector and by the current flow through the junction [1]. In addition to the temperature dependent leakage current, under irradiation the diode current is elevated by the charge carriers generated by incident particles to the sensitive region of the diode. The two components collectively elevate the junction temperature higher than the ambient temperature. This process, beyond a cri ... mehr

Zugehörige Institution(en) am KIT Institut für Neutronenphysik und Reaktortechnik (INR)
Publikationstyp Vortrag
Jahr 2015
Sprache Englisch
Identifikator KITopen ID: 230100356
HGF-Programm 32.21.11; LK 01
Erschienen in Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2015), Lisboa, Portugal, 20th - 24th April 2015
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