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Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

De Boer, Willem; Bartsch, Valeria; Bol, Johannes; Dierlamm, Alexander ORCID iD icon; Grigoriev, Eugene; Hauler, Florian; Heising, Stephan; Herz, O.; Jungermann, Levin; Keraenen, R.; Koppenhoefer, M.; Roederer, F.; Schneider, T.


Future experiments are using silicon detectors in a high
radiation environment and in high magnetic fields. The radiation
tolerance of silicon improves by cooling it to temperatures
below 180 K. At low temperatures the mobility increases, which
leads to larger de of the charge carriers by the Lorentz force.
A good knowledge of the Lorentz angle is needed for design and
operation of silicon detectors. We present measurements of the
Lorentz angle between 77 K and 300 K before and after
irradiation with a primary beam of 21 MeV protons.

Volltext §
DOI: 10.5445/IR/29862001
Cover der Publikation
Zugehörige Institution(en) am KIT Fakultät für Physik – Institut für Experimentelle Kernphysik (IEKP)
Publikationstyp Buch
Publikationsjahr 2001
Sprache Englisch
Identifikator urn:nbn:de:swb:90-AAA298620012
KITopen-ID: 29862001
Verlag Universität Karlsruhe (TH)
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
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