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Investigation of single boron acceptors at the cleaved Si:B(111) surface

Schöck, Maya 1; Sürgers, Christoph ORCID iD icon 1; Löhneysen, Hilbert von 1
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


The cleaved and (2X1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B accepters are identified due to their characteristic voltage-dependent contrast, which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy (STS) confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.

DOI: 10.1103/PhysRevB.61.7622
Zitationen: 16
Web of Science
Zitationen: 17
Zitationen: 18
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2000
Sprache Englisch
Identifikator ISSN: 1098-0121
KITopen-ID: 30522000
Erschienen in Physical Review B - Condensed Matter and Materials Physics
Verlag American Physical Society (APS)
Band 61
Heft 11
Seiten 7622-7627
Bemerkung zur Veröffentlichung Sonderdrucknummer 2001S92
Nachgewiesen in Scopus
Web of Science
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