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STM and STS on single dopants and Au-induced chains at the Si (111) surface

Sürgers, Christoph; Schöck, Maya; Trappmann, Thomas; Löhneysen, Hilbert von

Abstract: The electronic properties of single P- and B-dopants at the cleaved Si(1 1 1) surface of Czochralski-grown single crystals are investigated by scanning tunneling microscopy (STM) and spectroscopy at room temperature. Both types of dopants (donors or acceptors) can be identified by a specific voltage-dependent image contrast. The local variation of the electronic structure is confirmed by tunneling spectra taken at and away from the dopant site. Furthermore, Au-induced chainlike structures on vicinal Si(1 1 1) substrates are prepared by deposition of submonolayer coverages of gold. The tunneling spectra exhibit distinct features on the different types of protrusions which suggests that they arise from different types of atoms, i.e. Si or Au.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Institut für Festkörperphysik (IFP)
Publikationstyp Zeitschriftenaufsatz
Jahr 2003
Sprache Englisch
Identifikator DOI: 10.1016/S0169-4332(03)00032-1
ISSN: 0169-4332
KITopen ID: 9882003
HGF-Programm 52.01.01; LK 01
Erschienen in Applied surface science C
Band 212/213
Seiten 105-109
URLs Volltext_(für_Abonnenten)
Schlagworte Dopants, Reconstruction, Scanning tunneling microscopy, Scanning tunneling spectroscopy, Silicon surfaces
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