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Characterization of Growth and Real Structure of Nitride Based Semiconductor Devices by Use of Synchrotron Radiation

Miljevic, Bojan

Thin GaN films with different dislocation densities were characterized by X-ray scattering methods to study the influence of in-situ deposited SiN. The reciprocal space maps in both coplanar and grazing incidence geometry were measured to support the development of new method for determination of dislocation densities. The structure and morphology of InGaN quantum dots before and after capping were studied by X-ray scattering and by AFM. The results are discussed with predicted phase separation.

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DOI: 10.5445/IR/1000030281
Zugehörige Institution(en) am KIT Laboratorium für Applikationen der Synchrotronstrahlung (LAS)
Publikationstyp Hochschulschrift
Jahr 2012
Sprache Englisch
Identifikator urn:nbn:de:swb:90-302816
KITopen-ID: 1000030281
Verlag KIT, Karlsruhe
Abschlussart Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Laboratorium für Applikationen der Synchrotronstrahlung (LAS)
Prüfungsdaten 20.04.2012
Referent/Betreuer Prof. G. T. Baumbach
Schlagworte synchrotron radiation, X-ray scattering, InGaN, quantum dots, thin films
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
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