Characterization of Growth and Real Structure of Nitride Based Semiconductor Devices by Use of Synchrotron Radiation

Thin GaN films with different dislocation densities were characterized by X-ray scattering methods to study the influence of in-situ deposited SiN. The reciprocal space maps in both coplanar and grazing incidence geometry were measured to support the development of new method for determination of dislocation densities. The structure and morphology of InGaN quantum dots before and after capping were studied by X-ray scattering and by AFM. The results are discussed with predicted phase separation.