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URN: urn:nbn:de:swb:90-449247

Graphene field-effect devices at high frequencies

Benz, Christian

In this work, the high frequency response of several types of graphene field-effect transistors (GFET) is analyzed. In the first part, insulating substrates such as sapphire and hexagonal boron nitride are used to optimize device performance. In the second part, few-layer graphene is used as gate material to obtain ultra-thin GFET. Using large area CVD-grown graphene, an array of similar GFETs for improved device comparability and reproducibility is presented in the last part.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Hochschulschrift
Jahr 2014
Sprache Englisch
Identifikator KITopen ID: 1000044924
Verlag Karlsruhe
Umfang 119 S.
Abschlussart Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Physikalisches Institut (PHI)
Prüfungsdaten 31.10.2014
Referent/Betreuer Prof. H. v. Löhneysen
Schlagworte Graphene, high frequency, FET, sapphire, hexagonal boron nitride
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