Graphene field-effect devices at high frequencies

In this work, the high frequency response of several types of graphene field-effect transistors (GFET) is analyzed. In the first part, insulating substrates such as sapphire and hexagonal boron nitride are used to optimize device performance. In the second part, few-layer graphene is used as gate material to obtain ultra-thin GFET. Using large area CVD-grown graphene, an array of similar GFETs for improved device comparability and reproducibility is presented in the last part.