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The effect of normal and insulating layers on 0-π transitions in Josephson junctions with a ferromagnetic barrier

Heim, D.M.; Pugach, N.G.; Kupriyanov, M.Y.; Goldobin, E.; Koelle, D.; Kleiner, R.; Ruppelt, N.; Weides, M.; Kohlstedt, H.



Abstract (englisch): Using the Usadel approach, we provide a formalism that allows us to calculate the critical current density of 21 different types of Josephson junctions (JJs) with a ferromagnetic (F) barrier and additional insulating (I) or/and normal (N) layers inserted between the F layer and superconducting (S) electrodes. In particular, we obtain that in SFS JJs, even a thin additional N layer between the S layer and F layer may noticeably change the thickness dF of the F layer at which the 0-π transitions occur. For certain values of dF, a 0-π transition can even be achieved by changing only the N layer thickness. We use our model to fit experimental data of SIFS and SINFS tunnel junctions.


Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2015
Sprache Englisch
Identifikator DOI: 10.1088/1367-2630/17/11/113022
ISSN: 1367-2630
URN: urn:nbn:de:swb:90-568951
KITopen ID: 1000056895
Erschienen in New journal of physics
Band 17
Heft 11
Seiten 113022
Bemerkung zur Veröffentlichung Lizenz: Dieses Werk ist lizenziert unter CC BY 3.0 DE
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