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The effect of normal and insulating layers on 0-π transitions in Josephson junctions with a ferromagnetic barrier

Heim, D.M.; Pugach, N.G.; Kupriyanov, M.Y.; Goldobin, E.; Koelle, D.; Kleiner, R.; Ruppelt, N.; Weides, M.; Kohlstedt, H.

Abstract (englisch):
Using the Usadel approach, we provide a formalism that allows us to calculate the critical current density of 21 different types of Josephson junctions (JJs) with a ferromagnetic (F) barrier and additional insulating (I) or/and normal (N) layers inserted between the F layer and superconducting (S) electrodes. In particular, we obtain that in SFS JJs, even a thin additional N layer between the S layer and F layer may noticeably change the thickness dF of the F layer at which the 0-π transitions occur. For certain values of dF, a 0-π transition can even be achieved by changing only the N layer thickness. We use our model to fit experimental data of SIFS and SINFS tunnel junctions.

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Volltext §
DOI: 10.5445/IR/1000056895
DOI: 10.1088/1367-2630/17/11/113022
Zitationen: 8
Web of Science
Zitationen: 8
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2015
Sprache Englisch
Identifikator ISSN: 1367-2630
KITopen-ID: 1000056895
Erschienen in New journal of physics
Band 17
Heft 11
Seiten 113022
Nachgewiesen in Web of Science
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