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Effect of negative T-stress on R-curves for Si3N4-ceramics

Zielonka, Paul; Hettich, Pascal; Fünfschilling, Stefan; Schell, Günter ORCID iD icon; Rizzi, Gabriele; Fett, Theo

Abstract:

The main advantages of DCDC-specimens, completely stable crack extension and very high path stability due to the strongly negative Tstress term call for an application in R-curve determination. In this report, it is studied whether the T-stress affects the R-curve of silicon nitride. For this purpose, we selected three Si3N4-ceramics, which showed very flat crack resistance curves in test with edge-notched 4-point bending specimens. These materials were tested with DCDC-specimens. In contrast to the bending tests, the crack resistance decreased clearly. This effect can be understood as a consequence of the T-stress term.


Volltext §
DOI: 10.5445/IR/1000078268
Veröffentlicht am 02.01.2018
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Angewandte Materialien – Keramische Werkstoffe und Technologien (IAM-KWT1)
Publikationstyp Forschungsbericht/Preprint
Publikationsjahr 2017
Sprache Englisch
Identifikator ISSN: 2194-1629
urn:nbn:de:swb:90-782686
KITopen-ID: 1000078268
Verlag Karlsruher Institut für Technologie (KIT)
Umfang VI, 12 S.
Serie KIT Scientific Working Papers ; 76
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