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Verlagsausgabe
DOI: 10.5445/IR/1000080081
Veröffentlicht am 08.02.2018
Originalveröffentlichung
DOI: 10.1364/OE.26.000730
Scopus
Zitationen: 3
Web of Science
Zitationen: 2

Mask-aligner lithography using a continuous-wave diode laser frequency-quadrupled to 193 nm

Kirner, R.; Vetter, A.; Opalevs, D.; Gilfert, C.; Scholz, M.; Leisching, P.; Scharf, T.; Noell, W.; Rockstuhl, C.; Voelkel, R.

Abstract:
We present a mask-aligner lithographic system operated with a frequency-quadrupled continuous-wave diode laser emitting at 193 nm. For this purpose, a 772 nm diode laser is amplified by a tapered amplifier in the master-oscillator power-amplifier configuration. The emission wavelength is upconverted twice, using LBO and KBBF nonlinear crystals in second-harmonic generation enhancement cavities. An optical output power of 10 mW is achieved. As uniform exposure field illumination is crucial in mask-aligner lithography, beam shaping is realized with optical elements made from fused silica and CaF2 featuring a diffractive non-imaging homogenizer. A tandem setup of shaped random diffusers, one static and one rotating, is used to control speckle formation. We demonstrate first experimental soft contact and proximity prints for a field size of 1 cm2 with a standard binary photomask and proximity prints with a two-level phase mask, both printed into 120 nm layers of photoresist on unstructured silicon substrates.


Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Institut für Theoretische Festkörperphysik (TFP)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 1094-4087
URN: urn:nbn:de:swb:90-800818
KITopen ID: 1000080081
HGF-Programm 43.23.01; LK 01
Erschienen in Optics express
Band 26
Heft 2
Seiten 730-743
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