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Mask-aligner lithography using a continuous-wave diode laser frequency-quadrupled to 193 nm

Kirner, R.; Vetter, A.; Opalevs, D.; Gilfert, C.; Scholz, M.; Leisching, P.; Scharf, T.; Noell, W.; Rockstuhl, C.; Voelkel, R.

Abstract:
We present a mask-aligner lithographic system operated with a frequency-quadrupled continuous-wave diode laser emitting at 193 nm. For this purpose, a 772 nm diode laser is amplified by a tapered amplifier in the master-oscillator power-amplifier configuration. The emission wavelength is upconverted twice, using LBO and KBBF nonlinear crystals in second-harmonic generation enhancement cavities. An optical output power of 10 mW is achieved. As uniform exposure field illumination is crucial in mask-aligner lithography, beam shaping is realized with optical elements made from fused silica and CaF2 featuring a diffractive non-imaging homogenizer. A tandem setup of shaped random diffusers, one static and one rotating, is used to control speckle formation. We demonstrate first experimental soft contact and proximity prints for a field size of 1 cm2 with a standard binary photomask and proximity prints with a two-level phase mask, both printed into 120 nm layers of photoresist on unstructured silicon substrates.

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Verlagsausgabe §
DOI: 10.5445/IR/1000080081
Veröffentlicht am 08.02.2018
Originalveröffentlichung
DOI: 10.1364/OE.26.000730
Scopus
Zitationen: 7
Web of Science
Zitationen: 7
Coverbild
Zugehörige Institution(en) am KIT Institut für Theoretische Festkörperphysik (TFP)
Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 1094-4087
urn:nbn:de:swb:90-800818
KITopen-ID: 1000080081
HGF-Programm 43.23.01 (POF III, LK 01)
Erschienen in Optics express
Band 26
Heft 2
Seiten 730-743
Nachgewiesen in Web of Science
Scopus
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