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Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

Giambra, M. A.; Benfante, A.; Pernice, R.; Miseikis, V.; Fabbri, F.; Reitz, C. 1; Pernice, W. H. P. 1; Krupke, R. 1; Calandra, E.; Stivala, S.; Busacca, A. C.; Danneau, R. ORCID iD icon 1
1 Institut für Nanotechnologie (INT), Karlsruher Institut für Technologie (KIT)

Abstract:

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al$_{2}$O$_{3}$), titanium oxide (TiO$_{2}$), and hafnium oxide (HfO$_{2}$) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO$_{2}$ as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.


Verlagsausgabe §
DOI: 10.5445/IR/1000091133
Veröffentlicht am 10.01.2022
Originalveröffentlichung
DOI: 10.1021/acsomega.8b02836
Scopus
Zitationen: 19
Web of Science
Zitationen: 19
Dimensions
Zitationen: 19
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Publikationsdatum 19.01.2019
Sprache Englisch
Identifikator ISSN: 2470-1343
KITopen-ID: 1000091133
HGF-Programm 43.21.03 (POF III, LK 01) Carbon Nanosystems
Erschienen in ACS omega
Verlag American Chemical Society (ACS)
Band 4
Heft 1
Seiten 2256-2260
Schlagwörter 2018-020-021849 ALD
Nachgewiesen in Scopus
Dimensions
Web of Science
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