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Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels

Neuper, F.; Chandresh, A.; Singaraju, S. A.; Aghassi-Hagmann, J.; Hahn, H.; Breitung, B.

Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (V$_{th}$) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation, good on/off-ratios of more than five orders of magnitude could be demonstrated. The synthesis process is simple, inexpensive, and easily scalable and leads to depletion-mode EGFETs, which are fully functional at operation potentials below 2 V and allows us to increase V$_{th}$ by approximately 0.5 V.

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Verlagsausgabe §
DOI: 10.5445/IR/1000104795
Veröffentlicht am 16.01.2020
DOI: 10.1021/acsomega.9b02513
Zitationen: 1
Web of Science
Zitationen: 1
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2019
Sprache Englisch
Identifikator ISSN: 2470-1343
KITopen-ID: 1000104795
HGF-Programm 43.22.03 (POF III, LK 01)
Printed Materials and Systems
Erschienen in ACS omega
Band 4
Heft 24
Seiten 20579-20585
Bemerkung zur Veröffentlichung Keine Nutzung einer KNMF-Technologie
Vorab online veröffentlicht am 26.11.2019
Nachgewiesen in Web of Science
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