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Substrate induced nanoscale resistance variation in epitaxial graphene

Sinterhauf, Anna; Traeger, Georg A.; Momeni Pakdehi, Davood; Schädlich, Philip; Willke, Philip ORCID iD icon; Speck, Florian; Seyller, Thomas; Tegenkamp, Christoph; Pierz, Klaus; Schumacher, Hans Werner; Wenderoth, Martin


Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry. These samples exhibit a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H silicon carbide substrate and with the distance between the graphene and the substrate. Our results experimentally quantify the impact of the graphene-substrate interaction on the local transport properties of graphene.

Verlagsausgabe §
DOI: 10.5445/IR/1000119958
Veröffentlicht am 04.06.2020
DOI: 10.1038/s41467-019-14192-0
Zitationen: 22
Zitationen: 24
Cover der Publikation
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 12.2020
Sprache Englisch
Identifikator ISSN: 2041-1723
KITopen-ID: 1000119958
Erschienen in Nature Communications
Verlag Nature Research
Band 11
Heft 1
Seiten Art.-Nr.: 555
Vorab online veröffentlicht am 28.01.2020
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