KIT | KIT-Bibliothek | Impressum | Datenschutz

Substrate induced nanoscale resistance variation in epitaxial graphene

Sinterhauf, Anna; Traeger, Georg A.; Momeni Pakdehi, Davood; Schädlich, Philip; Willke, Philip ORCID iD icon; Speck, Florian; Seyller, Thomas; Tegenkamp, Christoph; Pierz, Klaus; Schumacher, Hans Werner; Wenderoth, Martin


Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively investigate the local transport properties of graphene prepared by polymer assisted sublimation growth (PASG) using scanning tunneling potentiometry. PASG graphene is characterized by a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H-SiC substrate as well as with the distance between the graphene sheet and the substrate. Our results experimentally quantify the strong impact of the graphene-substrate interaction on the local transport properties of graphene.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Forschungsbericht/Preprint
Publikationsmonat/-jahr 12.2020
Sprache Englisch
Identifikator KITopen-ID: 1000119959
Umfang 27 S.
Vorab online veröffentlicht am 28.01.2020
Nachgewiesen in arXiv
Relationen in KITopen
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
KITopen Landing Page