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A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Chen, Jianhui 1; Wan, Lu; Li, Han 1; Yan, Jun; Ma, Jikui; Sun, Biao; Li, Feng; Flavel, Benjamin S. 1
1 Institut für Nanotechnologie (INT), Karlsruher Institut für Technologie (KIT)


Traditional silicon solar cells extract holes and achieve interface passivation with the use of a boron dopant and dielectric thin films such as silicon oxide or hydrogenated amorphous silicon. Without these two key components, few technologies have realized power conversion efficiencies above 20%. Here, a carbon nanotube ink is spin coated directly onto a silicon wafer to serve simultaneously as a hole extraction layer, but also to passivate interfacial defects. This enables a low‐cost fabrication process that is absent of vacuum equipment and high‐temperatures. Power conversion efficiencies of 21.4% on an device area of 4.8 cm$^{2}$ and 20% on an industrial size (245.71 cm$^{2}$) wafer are obtained. Additionally, the high quality of this passivated carrier selective contact affords a fill factor of 82%, which is a record for silicon solar cells with dopant‐free contacts. The combination of low‐dimensional materials with an organic passivation is a new strategy to high performance photovoltaics.

Verlagsausgabe §
DOI: 10.5445/IR/1000126436
Veröffentlicht am 19.11.2020
DOI: 10.1002/adfm.202004476
Zitationen: 35
Web of Science
Zitationen: 19
Zitationen: 37
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 09.2020
Sprache Englisch
Identifikator ISSN: 1616-301X, 1616-3028
KITopen-ID: 1000126436
HGF-Programm 43.21.03 (POF III, LK 01) Carbon Nanosystems
Erschienen in Advanced functional materials
Verlag Wiley-VCH Verlag
Band 30
Heft 38
Seiten Art. Nr.: 2004476
Vorab online veröffentlicht am 12.07.2020
Nachgewiesen in Scopus
Web of Science
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