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Mirror Source based Overcurrent and Short Circuit Protection Method for High Power SiC MOSFETs

Sommer, Fabian ORCID iD icon; Soltau, Nils; Stamer, Fabian; Menger, Nikolas ORCID iD icon; Idaka, Shiori; Hiller, Marc

Abstract:

This paper presents a fast overcurrent and short circuit protection based on the mirror source detection method for 1200V/1200A Silicon Carbide (SiC) MOSFETs used in a high power Dual Active Bridge (DAB). It will be shown that this protection method is feasible for a low inductive short circuit caused by a half bridge shoot through, a high inductive short circuit based on a failure inside the load as well as short circuits of Type 1 or hard switching fault. Additionally, the short circuit behaviour is analyzed for different junction temperatures of the MOSFETs. Experimental results proof that using the investigated method always ensures the operation in the Short Circuit Safe operating Area (SCSOA) of the MOSFET after triggering short circuits.


Postprint §
DOI: 10.5445/IR/1000135891
Veröffentlicht am 03.07.2022
Scopus
Zitationen: 1
Cover der Publikation
Zugehörige Institution(en) am KIT Elektrotechnisches Institut (ETI)
Publikationstyp Proceedingsbeitrag
Publikationsdatum 02.07.2021
Sprache Englisch
Identifikator ISBN: 978-3-8007-5515-8
KITopen-ID: 1000135891
Erschienen in PCIM Europe digital days : : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 3-7 May 2021
Veranstaltung PCIM Europe digital days 2021: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (2021), Online, 03.05.2021 – 07.05.2021
Verlag VDE Verlag
Seiten 1712-1718
Schlagwörter Dual-Active-Bridge, SiC, MOSFET, Overcurrent Protection, Short Circuit Protection, High Power
Nachgewiesen in Scopus
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