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Fast sic-mosfet switch with gate boosting technology

Sack, M.; Hochberg, M.; Herzog, D.; Mueller, G.

Abstract (englisch):

Gate boosting enables a considerable increase in switching speed for commercially available MOSFETs. In the present work, a switch comprising three SiC-MOSFETs in parallel configuration has been combined with a gate drive circuit employing a gate boosting technology based on a series capacitance and increased driver voltage. The gate driver uses GaN-HEMTs in a half-bridge topology. The MOSFET switch has been tested in pulsed operation with a resistive load up to 1 kV and 90 A at the load. Thereby, the capacitance and supply voltage of the gate driver have been varied. A rise time of 3.3 ns at the load has been achieved.


Postprint §
DOI: 10.5445/IR/1000139891
Veröffentlicht am 01.08.2022
Scopus
Zitationen: 2
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Hochleistungsimpuls- und Mikrowellentechnik (IHM)
Publikationstyp Proceedingsbeitrag
Publikationsmonat/-jahr 07.2021
Sprache Englisch
Identifikator ISBN: 978-3-8007-5515-8
ISSN: 2191-3358
KITopen-ID: 1000139891
HGF-Programm 38.05.01 (POF IV, LK 01) Anthropogenic Carbon Cycle
Erschienen in PCIM Europe digital days 2021 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021
Veranstaltung PCIM Europe digital days 2021: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (2021), Online, 03.05.2021 – 07.05.2021
Verlag VDE Verlag
Seiten 40-46
Nachgewiesen in Scopus
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